Visium UltraLabs

Research that leads the world in Ultra Wide Band Gap (UWBG) semiconductors

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Starting with a bold vision to produce the world’s first commercially viable Far-UVC LED, VISIUM UltraLabs is pioneering Ultra Wide Band Gap (UWBG) materials to create a new class of semiconductors.

Advanced Research

Visium UltraLabs’ dedicated Research facility at Cornell Technology Park at Ithaca, New York is where some of the world’s most advanced research into a new class of semiconductors is taking place.

With scientific collaboration with both Cornell University and Nagoya University, Japan, we are making breakthroughs in materials science and physics that will change the way semiconductors are used.

 

Visium Ultralabs semiconductor research
UltraLabs conductor Visium
UltraLabs Train Visium
UltraLabs Visium conductor
Campus Shuttle MV Transit

Breakthroughs & Applications

Beyond Far-UVC applications, Visium’s research into Ultra-wide Bandgap semiconductors will create valuable breakthroughs for other sectors requiring high-performance, high-power semiconductors including defense & aerospace applications, power-hungry AI data centers, electric vehicles and smart grid systems, to name a few.

THE SCIENCE OF FAR-UVC

Academic Research

Far-UVC is Supported by a Robust and
Growing Body of Peer-Reviewed Science

2022
Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

Zhang, Z., Kushimoto, M., Yoshikawa, A., Aoto, K., Sasaoka, C., Showalter, L.J., and Amano, H.

2022
Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Zhang, Z., Kushimoto, M., Yoshikawa, A., Aoto, K., Sasaoka, C., Showalter, L.J., and Amano, H.

2022
Local stress control to suppress dislocation generation for pseudomorphically grown AlGaN UV-C laser diodes

Zhang, Z., Kushimoto, M., Yoshikawa, A., Aoto, K., Sasaoka, C., Showalter, L.J., and Amano, H.

2022
Continuous-wave lasing of AlGaN-based ultraviolet laser diode at 274.8 nm by current injection

Zhang, Z., Kushimoto, M., Yoshikawa, A., Aoto, K., Schowalter, L.J., Sasaoka, C., and Amano, H.

2022
Key temperature-dependent characteristics of AlGaN-based UV-C laser diode and demonstration of room-temperature continuous-wave lasing

Zhang, Z., Kushimoto, M., Yoshikawa, A., Aoto, K., Sasaoka, C., Showalter, L.J., and Amano, H.