Visium UltraLabs leaders to Present at International Workshop on Nitride Semiconductors 2026
Visium is pleased to announce that Dr. Leo Schowalter, Chief Technology Officer, and Dr. Shashwat Rathkanthiwar, Director of MOCVD Research, will present their latest research at the International Workshop on Nitride Semiconductors 2026 (IWN 2026), taking place November 8–13 in Kumamoto, Japan.
IWN is an international forum bringing together leading researchers, engineers and industry experts to share advances in group-III nitride semiconductor materials and devices.
On Tuesday, November 10, Dr. Schowalter will present:
Development of 229nm AlGaN far-UVC LEDs for air disinfection: 5:45–6:00pm
Dr. Rathkanthiwar will present:
MOCVD Growth of Pseudomorphic AlN/GaN/AlN HEMT Structures on Native AlN Substrates: 6:15–6:30pm
Their presentations reflect the work underway at Visium UltraLabs to advance ultrawide bandgap nitride semiconductor technology for next-generation Far-UVC and high-power, high-frequency electronic applications.
We’re proud to have Dr. Schowalter and Dr. Rathkanthiwar representing Visium UltraLabs and sharing their research with the international nitride semiconductor community.
About Visium Ultralabs
Visium UltraLabs’ dedicated Research facility at Cornell Technology Park at Ithaca, New York is where some of the world’s most advanced research into a new class of semiconductors is taking place.
With scientific collaboration with both Cornell University and Nagoya University, Japan, we are making breakthroughs in materials science and physics that will change the way semiconductors are used.
Dr. Leo Schowalter, Visium Chief Technology Officer, will present “Development of 229nm AlGaN far-UVC LEDs for air disinfection” on Tuesday, Nov. 10 at 5:45 pm.
Dr. Shashwat Rathkanthiwar, Director of MOCVD Research at Visium UltraLabs, will present a talk titles “MOCVD Growth of Pseudomorphic AlN/GaN/AlN HEMT Structures on Native AlN Substrates” on Tuesday, Nov. 10 at 6:15 pm